Sectors
Advanced Facilities
Sub Sectors
Advanced Manufacturing
Services
Design & Engineering, Digital and Advanced Technologies
Location
United States of America
The silicon carbide wafer production facility in Robbstown, Michigan was developed to support rising demand for advanced semiconductors used in electric vehicles and high‑performance electronics. Planned as a multi‑phase manufacturing facility, the project required rapid initial startup while allowing production capacity to expand over time.
The facility combines tightly controlled cleanroom environments with high‑availability utilities and power systems to support precision wafer processing. From the outset, the project was structured to balance speed to operations with long‑term scalability, enabling domestic semiconductor manufacturing capability to grow in line with market needs.
TCE Scope
TCE USA provided engineering, design, and data management services across multiple phases of the facility’s development and expansion. The scope included repurposing an existing 145,000 sq ft warehouse and integrating it into the manufacturing footprint, along with the addition of 40,000 sq ft of cleanroom space to support wafer processing operations.
TCE engineered utility and electrical systems sized for advanced manufacturing, including the design and integration of 10 MW and 30 MW electrical substations and associated power distribution systems. The scope also covered engineering support for production equipment installation and phased expansion of wafer processing areas across subsequent project stages.
Impact
The facility achieved initial operational capability within one year, enabling production to begin on an accelerated schedule. Through phased expansion, wafer processing capacity was increased to support growing demand from the electric vehicle and advanced electronics sectors. The project established a scalable manufacturing platform, positioning the facility to support future capacity growth while maintaining the reliability, precision, and power resilience required for silicon carbide wafer production.
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